Anomalous nonlinear photoresponse in a InGaNÕGaN heterostructure
نویسندگان
چکیده
The nonlinear ~third to fourth order! as well as linear photoconductivity in a Gallium nitride/ Indium-Gallium nitride ~GaN/InGaN! heterostructure is investigated using femtosecond pulses in the infrared ~IR! and near ultraviolet ~UV!. An anomalous IR photoresponse is explained by a four level model for the GaN region including defect density fluctuations and nonlinear carrier transport phenomena. The same model also explains the observed subpicosecond noninstantaneous IR response of the photodetector. The linear UV photoresponse originates in the InGaN region. Design guidelines for GaN-based nonlinear photodetectors used in autocorrelation measurements are suggested. © 2004 American Institute of Physics. @DOI: 10.1063/1.1728292#
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